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| Silizium-PIN-Fotodiode mit erhohter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 5.4 4.9 4.5 4.3 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 1.8 1.4 3.5 3.0 0.6 0.4 2.2 1.9 Approx. weight 0.1 g Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 350 nm bis 1100 nm q Kurze Schaltzeit (typ. 25 ns) q DIL-Plastikbauform mit hoher Packungsdichte q SMT-Variante auf Anfrage Anwendungen q Lichtschranken fur Gleich- und Features q Especially suitable for applications from 350 nm to 1100 nm q Short switching time (typ. 25 ns) q DIL plastic package with high packing density q SMT version on request Applications q Photointerrupters q Industrial electronics q For control and drive circuits Wechsellichtbetrieb im sichtbaren Lichtbereich q Industrieelektronik q "Messen/Steuern/Regeln" Typ Type BPW 34 B Bestellnummer Ordering Code Q62702-P945 Semiconductor Group 1 1997-11-19 feo06643 BPW 34 B Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 85 230 Einheit Unit C C Top; Tstg TS VR Ptot 32 150 V mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 75 850 350 ... 1100 Einheit Unit nA/Ix nm nm S S max S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current A LxB LxW H 7.45 2.73 x 2.73 mm2 mm x mm 0.5 mm 60 2 ( 30) Grad deg. nA IR Semiconductor Group 2 1997-11-19 BPW 34 B Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Description Spektrale Fotoempfindlichkeit, = 400 nm Spectral sensitivity Quantenausbeute, = 400 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom Short-circuit current Ee = 0.5 mW/cm2, = 400 nm Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 400 nm Nachweisgrenze, VR = 10 V, = 400 nm Detection limit Symbol Symbol Wert Value 0.2 0.62 390 7.4 ( 5.4) Einheit Unit A/W Electrons Photon mV A S VO ISC tr, tf 25 ns VF C0 TCV TCI NEP 1.3 72 - 2.6 0.18 1.3 x 10- 13 V pF mV/K %/K W Hz cm * Hz W D* 2.1 x 1012 Semiconductor Group 3 1997-11-19 BPW 34 B Relative spectral sensitivity Srel = f () 100 OHF01001 Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) 10 3 OHF01066 Total power dissipation Ptot = f (TA) 10 4 mV 160 mW Ptot 140 120 100 OHF00958 S rel % 80 P A V 10 3 10 2 VO 60 10 1 40 P 10 2 80 60 10 0 20 10 1 40 20 0 400 10 600 800 1000 nm 1200 -1 10 0 10 1 10 2 10 10 3 lx 10 4 EV 0 0 0 20 40 60 80 C 100 TA Dark current IR = f (VR), E = 0 4000 OHF00080 Capacitance C = f (VR), f = 1 MHz, E = 0 100 OHF00081 Dark current IR = f (TA), VR = 5 V, E = 0 10 3 OHF00082 R pA C pF 80 R nA 10 2 3000 70 60 2000 50 40 30 10 1 1000 10 0 20 10 0 0 5 10 15 V VR 20 0 -2 10 10 -1 10 0 10 1 V 10 2 10 -1 0 20 40 60 VR 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1997-11-19 |
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